unisonic technologies co., ltd 9n95 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2012 unisonic technologies co., ltd qw-r502-721.a 9a, 950v n-channel power mosfet ? description the utc 9n95 uses utc?s advanced proprietary, planar stripe, dmos technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) = 1.4 ? @ v gs = 10 v * ultra low gate charge ( typical 45 nc ) * low reverse transfer capacitance ( c rss = typical 14 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 1.gate 3.source 2.drain to-247 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 9N95L-T47-T 9n95g-t47-t to-247 g d s tube
9n95 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-721.a ? absolute maximum rating (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 950 v gate-source voltage v gss 30 v continuous drain current (t c = 25c) i d 9.0 a pulsed drain current (note 2) i dm 36 a avalanche current (note 2) i ar 9.0 a avalanche energy single pulsed(note 3) e as 900 mj repetitive(note 2) e ar 28 mj peak diode recovery dv/dt (note 4) dv/dt 4.0 v/ns power dissipation p d 160 w linear derating factor above t c = 25c 1.28 w/c junction temperature t j 150 c storage temperature t stg -55 ~ +150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width lim ited by maximum junction temperature 3. l = 21mh, i as = 9.0a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 9.0a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient ja 50 c/w junction to case jc 0.78 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0 v, i d = 250 a 950 v drain-source leakage current i dss v ds = 950 v, v gs = 0 v 10 a gate-body leakage current forward i gssf v gs = 30 v, v ds = 0 v 100 na reverse i gssr v gs = -30 v, v ds = 0 v -100 na breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25c 0.99 v/c on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 250 a 3.0 5.0 v static drain-source on-resistance r ds ( on ) v gs = 10v, i d = 4.5a 1.05 1.4 ? dynamic parameters input capacitance c iss v ds = 25 v, v gs = 0 v, f = 1.0 mhz 2100 2730 pf output capacitance c oss 175 230 pf reverse transfer capacitance c rss 14 18 pf switching characteristics turn-on delay time t d ( on ) v dd = 475v, i d =11.0 a, r g = 25 ? (note 1, 2) 50 110 ns turn-on rise time t r 120 250 ns turn-off delay time t d ( off ) 100 210 ns turn-off fall time t f 75 160 ns total gate charge q g v ds = 760v, i d = 11.0a, v gs = 10 v (note 1,2) 45 58 nc gate-source charge q gs 13 nc gate-drain charge q gd 18 nc
9n95 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-721.a ? electrical characteristics(cont.) parameter symbol test conditions min typ max unit drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs = 0 v, i s = 9.0 a 1.4 v maximum continuous drain-source diode forward current i s 9.0 a maximum pulsed drain-source diode forward current i sm 36 a reverse recovery time t r r v gs = 0 v, i s = 9.0 a, d if / dt =100 a/ s (note 1) 550 ns reverse recovery charge q rr 6.5 c notes: 1. pulse test : pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
9n95 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-721.a ? test circuits and waveforms v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/d t test circuit & waveforms same type as dut i sd v gs l v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current driver
9n95 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-721.a ? test circuits and waveforms(cont.) 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g gate charge test circuit gate charge waveforms v gs v gs 200nf same type as dut 3ma 10v t p r g dut l v ds i d v dd unclamped inductive switching test circuit t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching waveforms
9n95 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-721.a ? typical characteristics utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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